unisonic technologies co., ltd 10N60Z power m o sf et www.unisonic.com.tw 1 of 7 copyright ? 2013 unisonic technologies co., ltd qw-r502-936,a 10 a , 600v n-channel power mosfet ? descripti on th e ut c 10n 60z is a hi gh voltag e an d hi gh curre nt po w e r mosf et , designe d to have better c haract e ristics, such as fast s w itc h in g time, lo w gate c har ge, lo w on-stat e resista n ce a n d hav e a hig h rug g e d avala n ch e cha r acteristics. t h is po w e r mos f et is usual l y use d at high s pee d s w itchi ng a pplic atio ns in po w e r suppl ies, pw m motor contro ls , high efficient dc to dc c onv erters and br idg e circ uits. ? features * r ds (on) = 0.75 ? @v gs = 10v * lo w g a te cha r ge ( t y pic a l 4 4 n c) * lo w c rs s ( t y pical 1 8 pf ) * fast s w itching * 100 % aval an che tested * improved dv/d t capabilit y ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lea d free halogen free 1 2 3 10n6 0zl-tf1-t 10N60Zg-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source http://
10N60Z power mosfet unisonic technologi es co., ltd 2 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ? absolute maxi mu m ra ting s (t c = 25c unl es s other w i s e sp ecified) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 600 v gate-source voltage v gss 20 v avala n che c u r r ent (note 2) i ar 10 a drain current contin uo us i d 10 a pulse d (note 2 ) i dm 38 a avalanche energy singl e puls ed ( note 3) e as 530 mj repetitiv e (not e 2) e ar 15.6 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns po w e r diss i pat ion p d 50 w junctio n t e mperature t j +150 c operatin g t e mperatur e t opr -55 ~ +150 c storage t e mperature t st g -55 ~ +150 c notes: 1. absol u te ma xi mum ratings ar e those val ues be yo nd w h ich the dev ice cou l d be perm ane n t l y dam ag ed. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op er atio n is not i m plie d. 2. repetitiv e rati ng: pulse w i dth lim ited b y ma ximum juncti on t e mperat ure 3. l = 14.2mh, i as = 10a, v dd = 50v, r g = 25 ? starting t j = 2 5 c 4. i sd 9.5a, di/dt 200a/ s, v dd bv ds s , starti ng t j = 25c ? th er mal dat a paramet er symbol rat i ng unit junction to ambient ja 62.5 c/w junction to case jc 2.5 c/w
10N60Z power mosfet unisonic technologi es co., ltd 3 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ? electric al ch ara cteri s tic s ( t c = 25c, unless oth e r w is e specifi ed) paramet er symbol t es t conditions min typ max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s v gs =0 v, i d = 250 a 600 v drain-s ource l eaka ge curr en t i ds s v ds = 600v, v gs = 0 v 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = 20 v, v ds = 0 v 5 a reverse v gs = - 20 v, v ds =0 v -5 a breakd o w n vo l t age t e mperature co efficient ? bv ds s / ? t j i d = 250a, ref e renc ed to 25 c 0.7 v/c on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 5 a 0.68 0.75 ? dynamic characteristics input cap a cita nce c iss v ds = 25v, v gs =0v, f= 1.0 mhz 157 0 204 0 pf output capac itance c oss 166 215 pf reverse t r ansfer capac itanc e c rs s 18 24 pf switching characteristics turn-on delay time t d ( on ) v ds = 300v, i d = 10a, r g =2 5 ? (note 1 , 2) 23 55 ns t u rn-on rise t i me t r 69 150 ns turn-off delay time t d ( off ) 144 300 ns t u rn-off fall t i me t f 77 165 ns t o tal gate charge q g v ds = 480v, i d = 10a, v gs = 10 v (note1, 2) 44 57 nc gate-source c harg e q gs 6.7 nc gate-drain charge q gd 18.5 nc drain-source diode characteristics and maximum ratings drain-s ource diod e f o r w ard voltage v sd v gs =0 v, i s = 10a 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 10 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 38 a reverse recovery time t r r v gs =0 v, i s =1 0 a , di f /dt= 100a/s (note 1) 420 ns reverse recover y charge q rr 4.2 c notes: 1. pulse test : pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
10N60Z power mosfet unisonic technologi es co., ltd 4 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * d v/dt control l ed b y r g * i sd co ntrol l ed b y p u l se peri o d * d.u.t.-de vice un der test - + peak dio d e reco v e r y d v /d t t est circu i t p. w. period d= v gs (d r i ve r) i sd (d .u .t . ) i fm , b ody di od e fo rward c u rren t di /d t i rm bo dy dio de r e ve rse curre nt bo dy di ode reco very dv/dt bod y d iod e fo rwa r d voltag e dro p v dd 10v v ds (d.u.t. ) v gs = p.w. period peak dio d e r eco v e r y d v /d t w a v e fo rms
10N60Z power mosfet unisonic technologi es co., ltd 5 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ? test circuits and waveforms (cont.) v ds 90 % 10% v gs t d( o n) t r t d( of f ) t f s w itch ing t est circu i t sw it c h i n g w ave f o r m s 10 v charge q gs q gd q g v gs gate ch arg e t est circu i t gate charge wav e form v dd t p time bv dss i as i d( t) v ds(t ) unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
10N60Z power mosfet unisonic technologi es co., ltd 6 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ? ty pic al c h ara ct e ris tic s gate-source voltage, v cg (v) capacitance, (pf)
10N60Z power mosfet unisonic technologi es co., ltd 7 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ? typical characteristics(cont.) drain current, i d (a) drain current, i d (a) p dw t 1 t 2 single pulse d=0.5 0.2 0.1 0.05 0.02 0.01 no te s: 1. z jc (t )= 2.5 d /w m a x 2. du t y f a c t or ,d =t 1/ t 2 3.t jw -t c =p dw -z jc (t ) sq uare wa ve pul s e du ra tion , t 1 (sec) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 transient thermal response cur v e
10N60Z power mosfet unisonic technologi es co., ltd 8 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 3 6 , a ut c as s um es no r es pons i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r oduc t s at v al ues t hat exceed, ev en m o m ent ar i l y , r a t ed v a l ues ( s uc h as m a x i m u m r a t i n g s , op era t i ng c o ndi t i on ra nges , o r ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i c at i ons of any and al l ut c pr oduc t s des c r i bed or c ont ai ned her ei n. ut c pr oduc t s are not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i c es or s y s t em s w her e m a l f unc t i on of t hes e pr oduc t s c an be r eas ona bl y ex pec t ed t o res u l t i n per s ona l i n j u r y . re pro duc t i on i n w hol e or i n pa rt i s pr ohi bi t ed w i t hout t he pri o r w r i t t en c ons ent o f t he c o p y r i ght ow ner. t he i n f o r m at i o n pr es ent e d i n t h i s doc um en t do es not f o r m p a rt of any quo t a t i on or c ont r a c t , i s bel i e v ed t o be ac c u r a t e and r el i a bl e and m ay b e c hanged w i t hout n ot i c e.
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